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【演講公告】1/10(Wednesday) Professor Prasanta K. Basu

Speaker:Professor Prasanta K. Basu
* Institute of Radio Physics and Electronics, Calcutta University, India

Time:Wednesday, January 10, 2018 16:00 p.m. – 18:00 p.m.,

Venue:Conference Room 308, Mechanical Engineering Building, National Chung Cheng University (國立中正大學機械工程學系 R308)

Title:Transport and Optical Processes in Ge1-xSnx Alloy: An Emerging Electronic and Photonic Material

Si is the material par excellence. At present, almost all devices used in computers, communication, consumer electronics, etc., are grown in integrated form and are made of silicon grown on silicon substrate. However, the main drawback of Si is its indirect nature of band gap that hinders realization of efficient emitters and modulators for optical communication. Recent development of Ge1-xSnx alloy on Si provides a possible solution to this long standing problem. Under tensile strain or Sn concentration exceeding 8% in the alloy, the material shows direct gap nature. Lasers, LEDs, photodetectors, etc, have already been developed exploiting the direct band gap nature of the alloy and leads to possible electronics and photonics integration.
In the present talk, some electronic and optoelectronic properties of the direct gap alloy will be discussed. The work by the author and his group on giant enhancement of electron mobility considering all the scattering mechanisms will be discussed in detail. Further possibilities, like optimization of channel mobility in n-MOSFETs, negative differential resistance, resonant tunneling, will be pointed out. The composition in Ge1-x-ySixSny/Ge1-p-qSipSnq heterojunctions needed to obtain type II band alignment and possible device applications of the structure will be discussed. A few other outstanding work needed attention will be mentioned.


發佈日期   /   2018-01-08 15:10:56
發佈單位   /   前瞻製造系統頂尖研究中心
觀看次數   /   450

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