前瞻製造系統頂尖研究中心─系列講座三十六 (主講人- Dr. Rikmantra Basu)
Speaker：Dr. Rikmantra Basu
* Assistant Professor, Electronics and Communication Engineering Department, National Institute of Technology Delhi, India
Time：Wednesday, June 28, 2017 14:00 p.m. – 15:30 p.m.,
Venue：Conference Room 308, Mechanical Engineering Building, National Chung Cheng University (國立中正大學機械工程學系 R308)
Title：Semiconductor Based Novel Opto-Electronic Devices
Semiconductor based optoelectronic devices find widespread applications in communication, networking, sensing, night vision and many other areas. The present talk will focus on the author’s own work in the area of transistor lasers and hetero-phototransistors using both III-V compounds and their alloys as well as recently developed direct gap GeSn alloy.
Transistor Lasers perform both as light emitter and amplifier. The basic structure is heterojunction bipolar transistor. The base contains a Quantum Well. With sufficient injection of electrons and holes population inversion occurs in the QW in the base. The author has developed analytical models for the current-voltage characteristics, light power output and threshold base current. His theory and results will be presented along with comparison with experimental results.
Hetero-phototransistors are a good replacement for Avalanche Photodetectors since the former provides gain but no excess noise. The work with GeSn as the base, both analytical and simulation based will be presented and compared with the results for InGaAs based HPTs. GeSn based transistor laser will also be discussed.
發佈日期 / 2017-06-23 17:17:23
發佈單位 / 前瞻製造系統頂尖研究中心
觀看次數 / 578